Annealing effect on the physical properties of evaporated In2S3 films

Naidu Revathi, Pathi Prathap, Robert Miles, Kotte Ramakrishna Reddy

    Research output: Contribution to journalArticlepeer-review

    53 Citations (Scopus)


    In2S3 films of different thicknesses were deposited onto Corning 7059 glass substrates using close spaced evaporation method, at a constant substrate temperature and growth rate of 300 °C and 30 Å/s, respectively. The deposited layers were then annealed in vacuum at temperatures (Ta) in the range 100–500 °C for 1 h and changes in the chemical and physical properties of the layers were investigated. The films annealed at Ta300 nm and annealing temperature of 300 °C. A highest optical transmittance was found to be 92% in the annealing temperature range, 300 °C
    Original languageEnglish
    Pages (from-to)1487-1491
    JournalSolar Energy Materials & Solar Cells
    Issue number9
    Publication statusPublished - Sept 2010


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