Chemical analysis of Cd1−xZnxS/CdTe solar cells by plasma profiling TOFMS

Giray Kartopu, Agnès Tempez, Andrew Clayton, Vincent Barrioz, Stuart Irvine, Celia Olivero, Patrick Chapon, Sebastien Legendre, John Cooper

Research output: Contribution to journalArticlepeer-review


Thin film CdTe photovoltaic (PV) devices and reference layers obtained by the atmospheric pressure metalorganic vapour deposition (AP-MOCVD) method have been studied for their chemical structure using plasma profiling time-of-flight-mass spectroscopy (PP-TOFMS, also called glow discharge TOFMS). Different levels of arsenic (As) dopant in CdTe films were measured by PP-TOFMS and compared to results obtained from a more conventional depth profiling method (secondary ion mass spectrometry or SIMS). This comparison showed that PP-TOFMS has the sufficient sensitivity towards detection of the As dopant in CdTe and hence is suited as a rapid, low vacuum tool in controlling the large scale production of CdTe PV materials.
Original languageEnglish
Pages (from-to)82-85
JournalMaterials Research Innovations
Issue number1
Publication statusPublished - Mar 2014


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