Etching characteristics of TiNi thin film by focused ion beam

D. Z. Xie, Bryan Ngoi, Yong Qing Fu, A. S. Ong, B. H. Lim

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


The Ga+ focused ion beam (FIB) etching characteristics of TiNi thin films have been investigated. The thin films were deposited on Si(1 0 0) substrates by co-sputtering TiNi and Ti target using magnetron-sputtering system. Optical Microscope and atomic force microscopy (AFM) was used to analyze the etching rate and surface morphology of the TiNi. Experimental results show that the etched depth depends linearly on the ion fluence per area with a slope of 0.28 μm3/nC. But the etching rate decreases with increasing the ion beam current. The surface became smoother after FIB milling. The root-mean-square (rms) surface roughness changes nonlinearly with ion fluence with a minimum rms of about 4.3 nm at a fluence of about 3.1×1017 ions/cm2. The rms surface roughness decreases with increasing the ion beam current and reaches about 3.3 nm as the ion beam current is increased to 2 nA. A periodical ripple topography was observed.
Original languageEnglish
Pages (from-to)54-58
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 30 Mar 2004


Dive into the research topics of 'Etching characteristics of TiNi thin film by focused ion beam'. Together they form a unique fingerprint.

Cite this