H-Center and V-Center Defects in Hybrid Halide Perovskites

Lucy D. Whalley, Rachel Crespo-Otero, Aron Walsh*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

41 Citations (Scopus)
33 Downloads (Pure)


The self-trapping of holes with the formation of a molecular X2 - anion is a well-established process in metal halide (MX) crystals, but V-center (2X- + h+ X2-) and H-center (X- + Xi- + h+ X2-) defects have not yet been confirmed in halide perovskite semiconductors. The I2 - split-interstitial defect is predicted to be a spin radical in CH3NH3PbI3 with an optically excited state in the semiconductor band gap.

Original languageEnglish
Pages (from-to)2713-2714
Number of pages2
JournalACS Energy Letters
Issue number12
Early online date1 Nov 2017
Publication statusPublished - 8 Dec 2017
Externally publishedYes


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