Investigation of quantum dot solar cell device performance

Neil Beattie, Guillaume Zoppi, Ian Farrer, Patrick See, Robert Miles, David Ritchie

Research output: Contribution to conferencePaperpeer-review


The device performance of GaAs p-i-n solar cells containing stacked layers of self-assembled InAs quantum dots is investigated. The solar cells demonstrate enhanced external quantum efficiency below the GaAs band gap relative to a control device without quantum dots. This is attributed to the capture of sub-band gap photons by the quantum dots. Analysis of the current density versus voltage characteristic for the quantum dot solar cell reveals a decrease in the series resistance as the device area is reduce from 0.16 cm2 to 0.01 cm2. This is effect is not observed in control devices and is quantum dot related. Furthermore, low temperature measurements of the open circuit voltage for both quantum dot and control devices provide experimental verification of the conditions required to realise an intermediate band gap solar cell.
Original languageEnglish
Publication statusPublished - 2013
EventMaterials Research Society Spring Meeting 2013 - San Francisco
Duration: 1 Jan 2013 → …


ConferenceMaterials Research Society Spring Meeting 2013
Period1/01/13 → …


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