Optical properties of high quality Cu2ZnSnSe4 thin films

Franziska Luckert, David Hamilton, Michael Yakushev, Neil Beattie, Guillaume Zoppi, Matthew Moynihan, Ian Forbes, Anatoli Karotki, Alexandre Mudryi, Maarja Grossberg, Jüri Krustok, Robert Martin

Research output: Contribution to journalArticlepeer-review

91 Citations (Scopus)


Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra
Original languageEnglish
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 9 Aug 2011


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