Optimization of the deposition and annealing of CuAIMo thin film resistors

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


This paper studies the effect of varying deposition and annealing process parameters on the electrical performance and structural properties of a novel CuAlMo thin film resistor material. The design of experiments (DOE) and analysis of variance (ANOVA) methods were utilized to determine the optimum process conditions for the films which were prepared using DC magnetron sputtering before being annealed in air ambient. Films of low sheet resistance with near zero temperature coefficient of resistance (TCR) and good long term stability were obtained at a high deposition rate and low sputtering pressure. Subsequent annealing of the films in air resulted in further crystallization with grain growth and stress relief which gave an increase in conductivity and TCR. In addition to the deposition parameters, the stability of the film was also shown to improve with increasing heat treatment time and temperature.
Original languageEnglish
Title of host publicationAdvances in Manufacturing Technology XXVI
PublisherAston Business School
ISBN (Print)978-1905866601
Publication statusPublished - 12 Sept 2012
EventICMR 2012: International Conference on Manufacturing Research 2012 - Aston University, Birmingham, UK
Duration: 12 Sept 2012 → …


ConferenceICMR 2012: International Conference on Manufacturing Research 2012
Period12/09/12 → …
Internet address


Dive into the research topics of 'Optimization of the deposition and annealing of CuAIMo thin film resistors'. Together they form a unique fingerprint.

Cite this