Scalable silicon nanowire photodetectors

Peyman Servati, Alan Colli, S. Hofmann, Yong Qing Fu, Paul Beecher, Z. A. K. Durrani, Andrea Ferrari, Andrew Flewitt, J. Robertson, William Milne

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)


This paper presents photodetectors having vertically stacked electrodes with sub-micron (∼300 nm) separation based on silicon nanowire (SiNW) nanocomposites. The thin-film-like devices are made using standard photolithography instead of electron beam lithography and thus are amenable to scalable low-cost manufacturing. The processing technique is not limited to SiNWs and can be extended to different nanowires (NWs) (e.g., ZnO, CdSe) and substrates. The current–voltage characteristics show Schottky behaviour that is dependent on the properties of the contact metal and that of the pristine SiNWs. This makes these devices suitable for examination of electronic transport in SiNWs. Preliminary results for light sensitivity show promising photoresponse that is a function of effective NW density.
Original languageEnglish
Pages (from-to)64-66
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-2
Publication statusPublished - Apr 2007


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